Laterally vibrating-body double gate MOSFET with improved signal detection
2008
Abstract
Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1.25 mum and laterally vibrating MOS transistor structure has two lateral fixed gates separated from the movable transistor body by gaps of 165 nm.
Details
Title
Laterally vibrating-body double gate MOSFET with improved signal detection
Author(s)
Grogg, D. ; Tekin, H. C. ; Badila-Ciressan, N. D. ; Mazza, M. ; Tsamados, D. ; Ionescu, A. M.
Published in
Device Research Conference, 2008
Pages
155-156
Date
2008
ISSN
1548-3770
Keywords
Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2009-07-15