Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics
In this paper we report on the effect of the environment on the SiOâ‚‚/pentacene interface. Two batches of bottom-contact pentacene thin-film transistors have been fabricated with a 100 nm thick SiOâ‚‚ as dielectric. Considerable shifts of the threshold voltages have been observed for the TFTs whose dielectric surface has been exposed to air for long periods of storage before depositing the pentacene layer. Based on reports from other research groups in the field, we consider that long exposure of the SiOâ‚‚ to air may have the same effect on the SiOâ‚‚-pentace interface as short but more aggressive oxygen plasma treatment.
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