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research article

Pseudoferroelectricity: A possible scenario for doped ZnO

Tagantsev, A.K.
2008
Applied Physics Letters

A phenomenological Landau-theory model, where a crystal on cooling from a state with polar symmetry exhibits a maximum of dielectric permittivity and polarization-field hysteresis loops, is offered. The model is equivalent to that of a true ferroelectric in a weak external dc bias. Permittivity maximum occurs as a result of crossing the Widom line. In the model, the role of the external bias plays an intrinsic internal bias originating from a weak polarity of the high temperature state of the material. The results obtained show that the ferroelectriclike phenomena reported for doped ZnO are compatible with a Landau-theory description.

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Type
research article
DOI
10.1063/1.3036537
Web of Science ID

WOS:000261141400043

Author(s)
Tagantsev, A.K.
Date Issued

2008

Publisher

AIP American Institute of Physics

Published in
Applied Physics Letters
Volume

93

Issue

20

Article Number

202905

Subjects

cooling

•

dielectric hysteresis

•

ferroelectric materials

•

II-VI semiconductors

•

Landau levels

•

permittivity

•

semiconductor doping

•

wide band gap semiconductors

•

zinc compounds

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
June 25, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/40890
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