Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides

Reliable split C(V) measurements are shown to be feasible on ultra-thin oxides (down to 1.2 nm) by using relatively small area MOSFETs (typically 100 mum(2)). To this end, specific correction procedures for parasitic parallel capacitances and gate leakage impact on source-drain current characteristics are proposed. The amplitude of the effective mobility is found to be degraded significantly with oxide scaling. Moreover, the mobility attenuation at high field associated to the surface roughness remains unchanged with oxide thickness reduction. This mobility degradation could find its origin in enhanced remote coulomb or interface plasmon-phonon scattering processes, which are reinforced by oxide thinning. (C) 2003 Published by Elsevier Science Ltd.


Published in:
Solid-State Electronics, 47, 7, 1147-1153
Year:
2003
ISSN:
0038-1101
Note:
3rd International Workshop on Ultimate Integration of Silicon MAR 07-08, 2002 MUNICH, GERMANY
Laboratories:




 Record created 2009-05-12, last modified 2018-01-28


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)