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research article

Advanced temperature compensation for piezoresistive sensors based on crystallographic orientation

Chui, B. W.
•
Aeschimann, L.
•
Akiyama, T.  
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2007
Review of Scientific Instruments

We describe a highly effective method of reducing thermal sensitivity in piezoresistive sensors, in particular silicon cantilevers, by taking advantage of the dependence of the piezoresistive coefficient of silicon on crystallographic orientation. Two similar strain-sensing elements are used, positioned at 45 degrees to each other: One is set along a crystalline axis associated with a maximum piezoresistive coefficient to produce the displacement signal, while the other is set along an axis of the vanishing coefficient to produce the reference signal. Unlike other approaches, both sensing elements are coupled to the same cantilever body, maximizing thermal equilibration. Measurements show at least one order of magnitude improvement in thermal disturbance rejection over conventional approaches using uncoupled resistors. © 2007 American Institute of Physics.

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Type
research article
DOI
10.1063/1.2722386
Author(s)
Chui, B. W.
•
Aeschimann, L.
•
Akiyama, T.  
•
Staufer, U.
•
de Rooij, N. F.  
•
Lee, J.
•
Goericke, F.
•
King, W. P.
•
Vettiger, P.
Date Issued

2007

Published in
Review of Scientific Instruments
Volume

78

Issue

4

Start page

043706

End page

5

Note

400

Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
SAMLAB  
Available on Infoscience
May 12, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/39159
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