Nanostructured ZnO-based layers deposited by non reactive rf magnetron sputtering on ultra-thin SiO2/Si through a stencil mask

In this paper, we study the localized deposition of ZnO micro and nanostructures deposited by non-reactive rf-magnetron sputtering through a stencil mask on ultra-thin (10 nm) SiO2 layers containing a single plane of silicon nanocrystals (NCs), synthetized by ultra-low energy ion implantation followed by thermal annealing. The localized ZnO-deposited areas are reproducing the exact stencil mask patterns. A resistivity of around 5 x 10(-3) Omega cm is measured on ZnO layer. The as-deposited ZnO material is 97% transparent above the wavelength at 400 nm. ZnO nanostructures can thus be used as transparent electrodes for Si NCs embedded in the gate-oxide of MOS devices. (C) 2009 Elsevier B.V. All rights reserved.


Published in:
2nd International Symposium on Transparent Conductive Oxides
Presented at:
2nd International Symposium on Transparent Conductive Oxides, Hersonissos, Crete, Greece, October 22 - 26 2008
Year:
2008
Keywords:
Laboratories:




 Record created 2009-03-02, last modified 2018-03-17


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