Reduction of the boron cross-contamination for plasma deposition of p–i–n devices in a single-chamber large area radio-frequency reactor

In this article, a new treatment to reduce boron contamination of the interface between the p- and i- layer is presented. An ammonia flush, performed at 10 Pa for 1 min, after deposition of the p-layer considerably reduces the boron contamination at the p-i interface of amorphous silicon p-i-n solar cells prepared in a single-chamber reactor. This treatment avoids the need to move the substrate out of the reactor during the full deposition process of a solar cell, thereby reducing costs. The measurement of boron contamination depth profile in the i-layer was done by Secondary Ion Mass Spectroscopy and the effectiveness of the treatment was supported by quantum efficiency and I-V measurements of solar cells. © 2004 Elsevier B.V. All rights reserved.


Published in:
Thin Solid Films, 468, 1-2, 222-225
Year:
2004
ISSN:
00406090
Note:
IMT-NE Number: 384
Laboratories:


Note: The status of this file is: Involved Laboratories Only


 Record created 2009-02-10, last modified 2018-09-13

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