Device Grade Microcrystalline Silicon Owing to Reduced Oxygen Contamination
1996
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Details
Title
Device Grade Microcrystalline Silicon Owing to Reduced Oxygen Contamination
Author(s)
Torres, P. ; Meier, J. ; Flückiger, R. ; Kroll, U. ; Anna Selvan, J. A. ; Keppner, H. ; Shah, A. ; Littlewood, S. D. ; Kelly, I. E. ; Giannoulès, P.
Published in
Applied Physics Letters
Volume
69
Pages
1373-1375
Date
1996
Note
IMT-NE Number: 227
Laboratories
PV-LAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > PV-LAB - Photovoltaics and Thin Film Electronics Laboratory
Scientific production and competences > EPFL Partners > Neuchâtel Campus > PV-Lab - Photovoltaics and Thin Film Electronics Laboratory
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Scientific production and competences > EPFL Partners > Neuchâtel Campus > PV-Lab - Photovoltaics and Thin Film Electronics Laboratory
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2009-02-10