Hot Electrons in Amorphous Silicon

At extremely high electric fields (F≤0.55 MV/cm) and high temperatures (300<T<450K), full deactivation of the electron drift mobility in amorphous hydrogenated silicon (a-Si:H) is obtained and therefore the shallow trapping is substantially reduced. New data clearly demonstrate that the free electron (band) mobility in a-Si:H decreases when the electric field increases, contrary to other disordered materials (e.g., amorphous selenium). In this sense the free carrier transport in a-Si:H is similar to the hot carriers in crystals when phonon scattering prevails. © 1995 The American Physical Society.


Published in:
Phys. Rev. Lett., 75, -2984
Year:
1995
Note:
IMT-NE Number: 245
Laboratories:


Note: The status of this file is: Involved Laboratories Only


 Record created 2009-02-10, last modified 2018-09-13

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