Hot Electrons in Amorphous Silicon
At extremely high electric fields (F≤0.55 MV/cm) and high temperatures (300<T<450K), full deactivation of the electron drift mobility in amorphous hydrogenated silicon (a-Si:H) is obtained and therefore the shallow trapping is substantially reduced. New data clearly demonstrate that the free electron (band) mobility in a-Si:H decreases when the electric field increases, contrary to other disordered materials (e.g., amorphous selenium). In this sense the free carrier transport in a-Si:H is similar to the hot carriers in crystals when phonon scattering prevails. © 1995 The American Physical Society.
IMT-NE Number: 245
Record created on 2009-02-10, modified on 2016-08-08