Complete Microcrystalline p-i-n Solar Cell-Crystalline or Amorphous Cell Behavior
Complete μc-Si:H p-i-n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic μc-Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm2 due to an enhanced absorption in the near-infrared could be obtained. First light-soaking experiments indicate no degradation for the entirely μc-Si:H cells. Voltage-dependent spectral response measurements suggest that the carrier transport in complete μc-Si:H p-i-n cells may possibly be cosupported by diffusion (in addition to drift).
IMT-NE Number: 180
Record created on 2009-02-10, modified on 2016-08-08