Controlled synthesis of silicon nanocrystals into a thin SiO2 layer synthesized by stencil-masked ultra-low energy ion implantation

We have synthesized Si Nps rich submicron area within a thin SiO2 layer using a new method called “stencil-masked ion implantation”. It consists in implanting silicon ions at ultra-low energy through windows (from 50nm to 2μm) opened in a stencil mask containing. After thermal annealing the implanted regions perfectly mimic the mask geometry. Energy-filtered transmission electron microscopy images and PL measurement reveal that smaller nanocrystals are formed near the edges of the implanted areas due to a dose edge effect.


Presented at:
French Symposium on Emerging Technologies for Micro-nanofabrication, Toulouse, France, November 19 - 21 2008
Year:
2008
Laboratories:


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 Record created 2009-01-26, last modified 2018-03-17

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