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  4. GaAs/GaAlAs heterostructure rib waveguide stepped [Triangle Open]β coupler
 
research article

GaAs/GaAlAs heterostructure rib waveguide stepped [Triangle Open]β coupler

Wang, Lijun
•
Wu, Shengli
•
Salathe, R. P.
1994
Guangxue Xuebao/Acta Optica Sinica

GaAS/GaAlAs heterostructure rib waveguide coupler with stepped [Triangle Open]β Schottky electrodes has been investigated by using ion-etching and lift-off mask techniques, and optimization design of device structure and lowering epitaxy layer carrier concentration. Total losses of 10dB and extinction ratio of 26.8dB were obtained for single-mode operation at 1.3μm. Operation principle of this device and its design considerations were described in detail. Structural parameters of the coupler were given. The testing method and results for the coupler were presented. The structure of this coupler is compatible with the manufacturing engineering of the devices such as semiconductor lasers, easier to be adopted in repetitive manufacturing.

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Type
research article
Author(s)
Wang, Lijun
Wu, Shengli
Salathe, R. P.
Date Issued

1994

Published in
Guangxue Xuebao/Acta Optica Sinica
Volume

14

Issue

2

Start page

219

End page

221

Subjects

Waveguide couplers

•

Optical waveguides

•

Optical devices

•

Integrated optics

•

Light extinction

•

Optical modulation

•

Optical coupler

•

Rib waveguides

Note

Changchun Inst of Physics, Chinese Acad of Sciences, China

94061321608

Editorial or Peer reviewed

REVIEWED

Written at

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Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/34008
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