Luminescence and TEM-investigation of laser induced defects in (Al,Ga)As heterostructures
1985
Résumé
Laser induced defects in (Al,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM measurements indicate a point defect or point defect complex for B and D. Defect B is described by a configuration coordinate (CC-) model with low vibrational energies. Defect DLD consists of extended dislocations
Détails
Titre
Luminescence and TEM-investigation of laser induced defects in (Al,Ga)As heterostructures
Auteur(s)
Zysset, B. ; Salathe, R. P. ; Martin, J. L. ; Gotthardt, R. ; Reinhart, F. K.
Publié dans
Microscopic Identification of Electronic Defects in Semiconductors
Série
MRS Proceedings, 46
Pages
419
Présenté à
Pittsburgh, PA, USA
Date
1985
Editeur
Mater. Res. Soc
Mots-clés (libres)
Note
Inst. of Appl. Phys., Bern Univ., Switzerland
2625868
semiconductor
luminescence
topography
TEM-investigation
laser induced defects
(Al,Ga)As heterostructures
dark line defects
excitation spectra
point defect
point defect complex
extended dislocations
2625868
semiconductor
luminescence
topography
TEM-investigation
laser induced defects
(Al,Ga)As heterostructures
dark line defects
excitation spectra
point defect
point defect complex
extended dislocations
Laboratoires
LOA
Le document apparaît dans
Production scientifique et compétences > STI - Faculté des sciences et techniques de l'ingénieur > STI Archives > LOA - Laboratoire d'optique appliquée Prof. Salathé
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Publié
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Publié
Date de création de la notice
2009-01-20