Luminescence and TEM-investigation of laser induced defects in (Al,Ga)As heterostructures

Laser induced defects in (Al,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM measurements indicate a point defect or point defect complex for B and D. Defect B is described by a configuration coordinate (CC-) model with low vibrational energies. Defect DLD consists of extended dislocations


Presented at:
Pittsburgh, PA, USA
Year:
1985
Publisher:
Mater. Res. Soc
Keywords:
Note:
Inst. of Appl. Phys., Bern Univ., Switzerland
2625868
semiconductor
luminescence
topography
TEM-investigation
laser induced defects
(Al,Ga)As heterostructures
dark line defects
excitation spectra
point defect
point defect complex
extended dislocations
Laboratories:




 Record created 2009-01-20, last modified 2018-09-13


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