Laser-initiated Ga-deposition on quartz substrates

The deposition of Ga on quartz substrates by photodissociation of trimethylgallium has been investigated. Light from a frequency doubled Ar-ion laser beam (257.2 nm) was focused onto quartz substrates. The Ar-ion laser was operated under CW or mode-locking conditions. The deposition rate has been investigated as a function of averaged UV power densities in the range of 1.8-1750 W/cm2 and is shown to depend critically on the laser operating mode. For CW operation, the maximum growth rate within the focal zone is limited to 17 Å/s whereas under mode-locking conditions, no saturation is observed and the growth rate increases linearly with the laser power up to 70 Å/s at 1.75 kW/cm2


Presented at:
New York, NY, USA
Year:
1983
Publisher:
North-Holland
Keywords:
Note:
Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland
2127482
laser initiated Ga deposition
Ga thin film
quartz substrates
photodissociation
deposition rate
growth rate
Laboratories:




 Record created 2009-01-20, last modified 2018-03-17


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