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research article
Laser-Initiated Metal-Deposition on Gaas Substrates
Rytz-Froidevaux, Y.
•
Salathe, R. P.
•
Gilgen, H. H.
1981
The local deposition of metal structures by thermal dissociation of trimethylaluminium, dimethylzinc and dimethylcadmium on GaAs surfaces heated by a CW krypton laser has been investigated. Piles of amorphous aluminium and zinc and crystalline structures of Cd have been deposited at temperatures between 200 and 1200°C. The smallest size of the deposits was ≈4 μm
Type
research article
Authors
Rytz-Froidevaux, Y.
•
Salathe, R. P.
•
Gilgen, H. H.
Publication date
1981
Published in
Volume
84
Issue
4
Start page
216
End page
218
Note
Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland Copyright 1981, IEE 1757166 0375-9601 GaAs substrates thermal dissociation trimethylaluminium dimethylzinc dimethylcadmium amorphous crystalline structures Cd laser initiated metal deposition Al Zn CVD
Peer reviewed
REVIEWED
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Available on Infoscience
January 20, 2009
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