Developments in semiconductor lasers

The principles of gallium arsenide diode lasers are described and the history of developments is sketched. The importance of threshold current density is emphasised and it is shown that confinement of carriers is improved in heterojunctions using gallium-aluminium inter-layers. The separate requirements for confining photons, on the one hand, and carriers on the other, are indicated and it is suggested that threshold current densities as low as 1000 amperes/sq cm are possible in double threshold structures. It is also pointed out that the thinnest active zones, requiring high outgoing photon densities, cannot readily be used because of rapid optical degradation


Published in:
Technische Rundschau, 68, 38, 27, 29
Year:
1976
Keywords:
Note:
Inst. fur Angewandte Phys., Univ. Bern, Bern, Switzerland
Copyright 1976, IEE
982007
0040-148X
semiconductor lasers
threshold current density
GaAs diode lasers
Laboratories:




 Record created 2009-01-20, last modified 2018-09-13


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