Searching for the proper law of dislocation multiplication in covalent crystals

A simple model based on dislocation theory allows the construction of a fully defined system of differential equations and the calculation of curves that correspond to different mechanical tests such as stress relaxation, the creep test and the imposed strain rate test. Various multiplication and exhaustion rates of mobile dislocations have been considered. The numerical solution of the system reproduces satisfactorily experimental curves obtained in Ge single crystals at 750 K.


Published in:
JOURNAL OF PHYSICS: CONDENSED MATTER, 14, 48, 12887-12895
Year:
2002
Other identifiers:
Laboratories:
SPC
CRPP




 Record created 2008-12-23, last modified 2018-01-28

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