5 MHz 2×2 optical switch in silicon on insulator technology using plasma dispersion effect

We report on a 2×2 SOI switch, based on the plasma dispersion effect, reaching 5 MHz of switching frequency. Measured insertion losses, extinction ratio and crosstalk at 1300 nm and 1550 nm are presented and discussed.


Published in:
Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551), 2, 132-133
Presented at:
27th European Conference on Optical Communication, Amsterdam, Netherlands
Year:
2001
Publisher:
IEEE
Keywords:
Laboratories:




 Record created 2008-09-29, last modified 2018-09-13

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