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  4. A Single-Photon Detector Implemented in a130nm CMOS Imaging Process
 
conference paper

A Single-Photon Detector Implemented in a130nm CMOS Imaging Process

Gersbach, Marek  
•
Niclass, Cristiano  
•
Richardson, Justin
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2008
ESSDERC 2008 - 38th European Solid-State Device Research Conference
ESSDERC

We report on a new single photon avalanche diode (SPAD) fabricated in a 130nm CMOS imaging process. A novel circular structure combining shallow trench isolation (STI) and a passivation implant creates an effective guard ring against premature edge breakdown. Thanks to this guard ring, unprecedented levels of miniaturization may be reached at no cost of added noise, decreased sensitivity or timing resolution. The detector integrated along with quenching and read out electronics was fully characterized. Optical measurements show the effectiveness of the guard ring and the high degree of electric field planarity across the sensitive region of the detector. With a photon detection probability of up to 30% and a timing jitter of 125 ps at full-width-half-maximum this SPAD is well suited for applications such as 3-D imaging, fluorescence lifetime imaging and biophotonics.

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Type
conference paper
DOI
10.1109/ESSDERC.2008.4681750
Web of Science ID

WOS:000262973300064

Author(s)
Gersbach, Marek  
Niclass, Cristiano  
Richardson, Justin
Henderson, Robert
Grant, Lindsay
Charbon, Edoardo  
Date Issued

2008

Published in
ESSDERC 2008 - 38th European Solid-State Device Research Conference
Start page

270

End page

273

Subjects

SPAD

•

130nm

•

CMOS imaging

•

NCCR-MICS

•

NCCR-MICS/CL2

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
AQUA  
Event nameEvent placeEvent date
ESSDERC

Edinburgh

September 2008

Available on Infoscience
June 27, 2008
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/26484
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