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  4. Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H-2 discharges
 
research article

Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H-2 discharges

Strahm, B.  
•
Howling, A. A.  
•
Sansonnens, L.  
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2007
Plasma Sources Science & Technology

In this work, the microstructure transition from amorphous to microcrystalline silicon is defined in terms of the silane concentration in the plasma as opposed to the silane concentration in the input gas flow. In situ Fourier transform infrared absorption spectroscopy combined with ex situ Raman spectroscopy has been used to calibrate and validate this approach. Results show that a relevant parameter to obtain mu c-Si : H from SiH4/H-2 mixtures is the plasma composition, which is determined not only by the gas dilution ratio but also by the silane depletion fraction. It is also shown that mu c-Si : H can only be deposited efficiently, in terms of gas utilization, at a high rate by using high input concentration and depletion of silane.

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Type
research article
DOI
10.1088/0963-0252/16/1/011
Web of Science ID

WOS:000244370700027

Author(s)
Strahm, B.  
Howling, A. A.  
Sansonnens, L.  
Hollenstein, C.  
Date Issued

2007

Published in
Plasma Sources Science & Technology
Volume

16

Issue

1

Start page

80

End page

89

Note

Sp. Iss. SI

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CRPP  
SPC  
Available on Infoscience
April 16, 2008
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/22366
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