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research article
Dislocation formation from a surface step in semiconductors: An ab initio study
2006
The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large-scale first-principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60 degrees dislocations for both tensile and compressive deformations. We have also examined the effect of surface and step termination on the plastic mechanisms.
Type
research article
Web of Science ID
WOS:000236467100005
Authors
Publication date
2006
Published in
Volume
73
Issue
9
Article Number
092105
Peer reviewed
REVIEWED
Available on Infoscience
April 16, 2008
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