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research article

Rapid deposition of hydrogenated microcrystalline silicon by a high current DC discharge

Franz, D.
•
Grangeon, F.
•
Delachaux, T.  
Show more
2001
Thin Solid Films

Microcrystalline hydrogenated silicon films (muc-Si:H) have been deposited by a high current DC plasma in argon-silane-hydrogen mixtures at growth rates up to 10 nm/s and at substrate temperatures below 500 degreesC. Scanning electron microscopy, X-ray diffraction and FTIR analyses show that these films are highly crystallized. The surface morphology depends strongly on the experimental conditions and varies from a cauliflower structure to a prismatic one. The crystalline orientation of the films also changes with the experimental conditions whereas other properties such as crystallite size, columnar growth, and crystallinity of the films remain unchanged. (C) 2001 Elsevier Science B.V. All rights reserved.

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Type
research article
DOI
10.1016/S0040-6090(00)01600-X
Web of Science ID

WOS:000167378300004

Author(s)
Franz, D.
Grangeon, F.
Delachaux, T.  
Howling, A. A.  
Hollenstein, C.  
Karner, J.
Date Issued

2001

Published in
Thin Solid Films
Volume

383

Issue

1-2

Start page

11

End page

14

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CRPP  
SPC  
Available on Infoscience
April 16, 2008
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/21748
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