research article
Negative dynamic mobility of electrons in silicon in the far-infrared range
We performed Monte Carlo simulation of electron response to a strong pumping wave (443 GHz) and weak signal harmonic waves (886 and 1329 GHz) in silicon. A negative dynamic conductivity is found to arise for 1329 GHz above a threshold value of the pumping wave amplitude and below a maximum value of the signal wave amplitude in a limited range of phase difference between the waves.
Type
research article
Author(s)
Date Issued
1997
Volume
18
Issue
6
Start page
1217
End page
1222
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
Available on Infoscience
April 16, 2008
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