Negative dynamic mobility of electrons in silicon in the far-infrared range

• Published in: International Journal of Infrared and Millimeter Waves (ISSN: 0195-9271), vol. 18, num. 6, p. 1217-1222
• Publication date: 1997

We performed Monte Carlo simulation of electron response to a strong pumping wave (443 GHz) and weak signal harmonic waves (886 and 1329 GHz) in silicon. A negative dynamic conductivity is found to arise for 1329 GHz above a threshold value of the pumping wave amplitude and below a maximum value of the signal wave amplitude in a limited range of phase difference between the waves.

Reference

• CRPP-ARTICLE-1997-055
• doi:10.1007/BF02678228

Record created on 2008-04-16, modified on 2017-05-12