Negative dynamic mobility of electrons in silicon in the far-infrared range

We performed Monte Carlo simulation of electron response to a strong pumping wave (443 GHz) and weak signal harmonic waves (886 and 1329 GHz) in silicon. A negative dynamic conductivity is found to arise for 1329 GHz above a threshold value of the pumping wave amplitude and below a maximum value of the signal wave amplitude in a limited range of phase difference between the waves.


Published in:
International Journal of Infrared and Millimeter Waves, 18, 6, 1217-1222
Year:
1997
ISSN:
0195-9271
Laboratories:
SPC
CRPP




 Record created 2008-04-16, last modified 2018-09-13


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