Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70° C''

Mircea, A.; Caliman, A.; Iakovlev, V.; Mereuta, A.; Suruceanu, G.; Berseth, C.-A.; Royo, P.; Syrbu, A.; Kapon, E.

doi:10.1109/LPT.2006.890081

research article

Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70° C''

Mircea, A.

•

Caliman, A.

•

Iakovlev, V.

2007

IEEE Photonics Technology Letters

Cite this item

Mircea, A., Caliman, A., Iakovlev, V., Mereuta, A., Suruceanu, G., Berseth, C.-A., Royo, P., Syrbu, A., & Kapon, E. (2007). Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70° C″. IEEE Photonics Technology Letters, 19, 121–123. https://doi.org/10.1109/LPT.2006.890081

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