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  4. Quantitative Imaging of InGaAs/GaAs Layers Using Transmission Electron Microscopy Methods: Characterization of Stresses and Chemical Composition
 
research article

Quantitative Imaging of InGaAs/GaAs Layers Using Transmission Electron Microscopy Methods: Characterization of Stresses and Chemical Composition

Leifer, K.  
•
Buffat, P.A.  
•
Cagnon, J.  
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2002
Journal of Crystal Growth
  • Details
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Type
research article
DOI
10.1016/S0022-0248(01)02297-7
Web of Science ID

WOS:000176512900111

Author(s)
Leifer, K.  
Buffat, P.A.  
Cagnon, J.  
Kapon, E.  
Rudra, A.  
Stadelmann, P.A.  
Date Issued

2002

Published in
Journal of Crystal Growth
Volume

237-239

Start page

1471

End page

1475

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPN  
CIME  
Available on Infoscience
February 29, 2008
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/19682
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