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research article
Characteristics of InAsP/InGaAsP Edge Emitting Laser Diodes Obtained by Localised Fusion on GaAs Substrates
1997
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the disordering of quantum wells at fusion temperatures induced by point defects incorporated during low temperature growth.
Type
research article
Web of Science ID
WOS:000072041600031
Authors
Syrbu, A.V.
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Fernandez, J.
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Behrend, J.
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Sagalowicz, L.
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Publication date
1997
Published in
Volume
33
Issue
23
Start page
1954
End page
1955
Peer reviewed
REVIEWED
Available on Infoscience
February 29, 2008
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