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research article
InGaAs/InGaAsP/InP Edge Emitting Laser Diodes on p-GaAs Substrates Obtained by Localised Wafer Fusion
1997
The authors present low voltage barrier p-InP/p-GaAs junctions obtained by localised fusion which facilitates a better evacuation of absorbed gases and native oxides from the fused interface. Using this approach InGaAs/lnGaAsP/InP edge emitting lasers fused to p-GaAs were realised for the first time, showing better parameters than as-grown diodes. The presented results prove that localised fusion is a suitable tool for achieving additional lateral current confinement, which may be important for a wide variety of other device applications.
Type
research article
Web of Science ID
WOS:A1997WZ74700029
Authors
Publication date
1997
Published in
Volume
33
Issue
10
Start page
866
End page
867
Peer reviewed
REVIEWED
Available on Infoscience
February 29, 2008
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