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research article
Charge transport mechanisms in microcrystalline silicon
A heterogeneous charge transport model for microcrystalline silicon based on fluctuation-induced tunneling is presented that fits the low-temperature saturation observed in dark conductivity measurements and accounts for the film microstructure. Excellent agreement is found when the model is applied to data reported in the literature, particularly for highly crystalline samples, which produce the highest performance transistors. Values obtained for the three fitting parameters are consistent with typical measurements of microcrystalline silicon film morphology and the conduction band offset between amorphous and crystalline silicons.
Type
research article
Web of Science ID
WOS:000252284200075
Authors
Publication date
2008
Published in
Volume
92
Start page
012107
End page
1
Subjects
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
January 7, 2008
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