Bringing NoCs to 65nm

Very deep submicron process technologies are ideal application fields for NoCs, which offer a promising solution to the scalability problem. This article sheds light on the benefits and challenges of Noc-Based interconnect design in nanometer CMOS. The author present experimental results from fully working 65-NM Noc Designs and a detailed scalability analysis.


Published in:
IEEE Micro Magazine, 12, 5, September/October, 75-85
Year:
2007
ISSN:
0272-1732
Laboratories:




 Record created 2007-12-04, last modified 2018-01-28

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