research article
Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs
Cite this item
Munteanu, D., & Ionescu, A. M. (2002). Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs. IEEE Transactions on Electron Devices, 49(7), 1198–1205. https://doi.org/10.1109/TED.2002.1013276
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Type
research article
Web of Science ID
WOS:000176532900015
Author(s)
Munteanu, D.
Date Issued
2002
Published in
Volume
49
Issue
7
Start page
1198
End page
1205
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 10, 2007
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