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  4. Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs
 
research article

Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs

Munteanu, D.
•
Ionescu, A. M.  
2002
IEEE Transactions on Electron Devices
  • Details
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Type
research article
DOI
10.1109/TED.2002.1013276
Web of Science ID

WOS:000176532900015

Author(s)
Munteanu, D.
Ionescu, A. M.  
Date Issued

2002

Published in
IEEE Transactions on Electron Devices
Volume

49

Issue

7

Start page

1198

End page

1205

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
October 10, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/12745
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