research article
Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs
Type
research article
Web of Science ID
WOS:000176532900015
Author(s)
Munteanu, D.
Date Issued
2002
Published in
Volume
49
Issue
7
Start page
1198
End page
1205
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 10, 2007
Use this identifier to reference this record