Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs

• Published in: IEEE Transactions on Electron Devices (TED), vol. 49, num. 7, p. 1198-1205
• Publication date: 2002

Reference

• NANOLAB-ARTICLE-2002-001
• View record in Web of Science

Record created on 2007-10-10, modified on 2017-05-10