Towards Reliable 100-Nanometer Scale Stencil Lithography on Full Wafer: Progress AND Challenges

We have fabricated new and robust nanostencil membranes for the surface patterning of 100-nm scale Al wires on full wafer scale. The stencil membranes are mechanically reinforced with corrugations, making them more stable against accumulated stress. The apertures in the stencil are fabricated by a combination of UV lithography and focused ion beam milling, ranging from sub-100 nm to several microns. The presence of a gap between the stencil aperture and the substrate results in a blurring of the pattern, on the order of 100-300 nm. A gentle Al dry etch is applied to reduce the blurring, achieving sub-100 nm wide structures. 80 nm wide nanowires connected to micrometer-scale contact pads are fabricated and shown. The clogging of the stencil apertures is quantified and a cleaning procedure is presented.


Published in:
State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International, 195-198
Presented at:
14th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers ’07), Lyon, France, 10-14 June, 2007
Year:
2007
Publisher:
IEEE
ISBN:
1-4244-0842-3
Keywords:
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2007-09-13, last modified 2018-05-12

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