Site- and energy-controlled pyramidal quantum dot heterostructures
The formation mechanisms, structure and optoelectronic properties of Ga(In)As/(Al)GaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition on patterned (111)B GaAs substrates are reviewed. With this approach, it is possible to prepare high-quality semiconductor QDs whose position on a substrate is precisely controlled via a pre-growth photolithography step. The dots are formed at the center of an inverted, tetrahedral pyramid and are surrounded by distinct, low-dimensional barriers (quantum wires and quantum wells). Reproducible neutral and charged exciton states are observed in the QDs and are probed using microphotoluminescence and photon correlation spectroscopy. Single- and correlated-photon emissions are systematically detected from specific single and biexciton states. The emission spectra of light emitting diodes incorporating single pyramidal dots indicate the possibility of preferential injection of charge carriers via self-ordered wires connected to the dots. Finally, photonic crystal structures incorporating pyramidal QDs with controlled energy states are demonstrated. (C) 2004 Elsevier B.V. All rights reserved.
WOS:000225282500020
2004
25
2-3
288
297
Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland. Kapon, E, Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland. eli.kapon@epfl.ch
ISI Document Delivery No.: 873LT
Cited Reference Count: 27
Cited References:
BAIER MH, 2004, APPL PHYS LETT, V84, P1943
BAIER MH, 2004, APPL PHYS LETT, V84, P648
BIASIOL G, 1998, PHYS REV LETT, V81, P2962
FATTAL D, 2004, PHYS REV LETT, V92
GISIN N, 2002, REV MOD PHYS, V74, P145
HAPP TD, 2002, PHYS REV B, V66
HARTMANN A, 1997, APPL PHYS LETT, V71, P1314
HARTMANN A, 1999, J PHYS-CONDENS MAT, V11, P5901
HARTMANN A, 2000, PHYS REV LETT, V84, P5648
HEIDEMEYER H, 2003, PHYS REV LETT, V91
KNILL E, 2001, NATURE, V46, P409
KOHMOTO S, 1999, APPL PHYS LETT, V75, P3488
LEIFER K, 2000, APPL PHYS LETT, V77, P3923
MICHELINI F, 2004, APPL PHYS LETT, V84, P4086
MICHELINI F, 2004, EPFL SUPERCOMPUT REV, V14, P18
MICHLER P, 2000, NATURE, V406, P968
MOREAU E, 2001, PHYS REV LETT, V87
PELUCCHI E, 2003, PHYS STATUS SOLIDI B, V238, P223
PELUCCHI E, 2004, PHYSICA E, V23, P476
REESE C, 2001, APPL PHYS LETT, V78, P2279
REINHARDT F, 1996, APPL SURF SCI, V104, P529
SANTORI C, 2001, PHYS REV LETT, V86, P1502
SEBALD K, 2002, APPL PHYS LETT, V81, P2920
WARBURTON RJ, 2000, NATURE, V405, P926
WATANABE S, 2004, APPL PHYS LETT, V84, P2907
YANG T, 2003, J APPL PHYS, V93, P1190
YUAN ZL, 2002, SCIENCE, V295, P102
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