We have directly measured, under operating conditions, the distributions of carrier densities and temperatures in a gain-clamped semiconductor optical amplifier designed for operation at 1.55 mum. As expected, longitudinal spatial hole burning is much smaller than in conventional semiconductor optical amplifiers and the effects of gain clamping are clearly evidenced. The amplifier nevertheless shows a sizeable temperature increase for both the lattice and the carriers at high currents, which are attributed to contributions of Auger recombination, intervalence band absorption, and Joule and recombination heating. (C) 2002 American Institute of Physics.
Note:
Swiss Fed Inst Technol, EPFL, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland. Alcatel Res & Innovat, F-91461 Marcoussis, France. Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan. Nomura, MS, Swiss Fed Inst Technol, EPFL, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 599DG
Times Cited: 1
Cited Reference Count: 19
Cited References:
AGRAWAL GP, 1986, LONG WAVELENGTH SEMI
BACHMANN M, 1996, ELECTRON LETT, V32, P2076
BAUER B, 1994, IEEE PHOTONIC TECH L, V6, P182
BENNETT AJ, 1998, J APPL PHYS, V83, P3784
EVANS PA, 1994, SEMICOND SCI TECH, V9, P1740
FANG WCW, 1995, IEEE J SEL TOP QUANT, V1, P117
FEHR JN, 2001, APPL PHYS LETT, V78, P4079
FEHR JN, 2002, IEEE J QUANTUM ELECT, V38, P674
GIRARDIN F, 1997, IEEE J SEL TOP QUANT, V3, P461
HESSLER T, 1997, QUANTUM SEMICL OPT, V9, P675
JOYCE WB, 1977, APPL PHYS LETT, V31, P354
KAPPEI L, UNPUB
PLEUMEEKERS JL, 1998, IEEE J QUANTUM ELECT, V34, P879
REES P, 1995, IEEE J QUANTUM ELECT, V31, P1047
RINNER F, 2002, APPL PHYS LETT, V80, P19
SALLERAS F, UNPUB
SCHAAFSMA DT, 1999, IEEE PHOTONIC TECH L, V11, P727
SIMON JC, 1994, ELECTRON LETT, V30, P49
WOLFSON D, 1999, IEEE PHOTONIC TECH L, V11, P1494
