Density clamping and longitudinal spatial hole burning in a gain-clamped semiconductor optical amplifier
We have directly measured, under operating conditions, the distributions of carrier densities and temperatures in a gain-clamped semiconductor optical amplifier designed for operation at 1.55 mum. As expected, longitudinal spatial hole burning is much smaller than in conventional semiconductor optical amplifiers and the effects of gain clamping are clearly evidenced. The amplifier nevertheless shows a sizeable temperature increase for both the lattice and the carriers at high currents, which are attributed to contributions of Auger recombination, intervalence band absorption, and Joule and recombination heating. (C) 2002 American Institute of Physics.
WOS:000178318400006
2002
81
15
2692
2694
Swiss Fed Inst Technol, EPFL, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland. Alcatel Res & Innovat, F-91461 Marcoussis, France. Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan. Nomura, MS, Swiss Fed Inst Technol, EPFL, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 599DG
Cited Reference Count: 19
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