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  4. Density clamping and longitudinal spatial hole burning in a gain-clamped semiconductor optical amplifier
 
research article

Density clamping and longitudinal spatial hole burning in a gain-clamped semiconductor optical amplifier

Nomura, M. S.
•
Salleras, F.  
•
Dupertuis, M. A.  
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2002
Applied Physics Letters

We have directly measured, under operating conditions, the distributions of carrier densities and temperatures in a gain-clamped semiconductor optical amplifier designed for operation at 1.55 mum. As expected, longitudinal spatial hole burning is much smaller than in conventional semiconductor optical amplifiers and the effects of gain clamping are clearly evidenced. The amplifier nevertheless shows a sizeable temperature increase for both the lattice and the carriers at high currents, which are attributed to contributions of Auger recombination, intervalence band absorption, and Joule and recombination heating. (C) 2002 American Institute of Physics.

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Type
research article
DOI
10.1063/1.1512308
Web of Science ID

WOS:000178318400006

Author(s)
Nomura, M. S.
Salleras, F.  
Dupertuis, M. A.  
Kappei, L.  
Marti, D.  
Deveaud, B.  
Emery, J. Y.
Crottini, A.  
Dagens, B.
Shimura, T.
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Date Issued

2002

Published in
Applied Physics Letters
Volume

81

Issue

15

Start page

2692

End page

2694

Subjects

LASERS

•

MODULATION

•

SOA

Note

Swiss Fed Inst Technol, EPFL, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland. Alcatel Res & Innovat, F-91461 Marcoussis, France. Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan. Nomura, MS, Swiss Fed Inst Technol, EPFL, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland.

ISI Document Delivery No.: 599DG

Cited Reference Count: 19

Cited References:

AGRAWAL GP, 1986, LONG WAVELENGTH SEMI

BACHMANN M, 1996, ELECTRON LETT, V32, P2076

BAUER B, 1994, IEEE PHOTONIC TECH L, V6, P182

BENNETT AJ, 1998, J APPL PHYS, V83, P3784

EVANS PA, 1994, SEMICOND SCI TECH, V9, P1740

FANG WCW, 1995, IEEE J SEL TOP QUANT, V1, P117

FEHR JN, 2001, APPL PHYS LETT, V78, P4079

FEHR JN, 2002, IEEE J QUANTUM ELECT, V38, P674

GIRARDIN F, 1997, IEEE J SEL TOP QUANT, V3, P461

HESSLER T, 1997, QUANTUM SEMICL OPT, V9, P675

JOYCE WB, 1977, APPL PHYS LETT, V31, P354

KAPPEI L, UNPUB

PLEUMEEKERS JL, 1998, IEEE J QUANTUM ELECT, V34, P879

REES P, 1995, IEEE J QUANTUM ELECT, V31, P1047

RINNER F, 2002, APPL PHYS LETT, V80, P19

SALLERAS F, UNPUB

SCHAAFSMA DT, 1999, IEEE PHOTONIC TECH L, V11, P727

SIMON JC, 1994, ELECTRON LETT, V30, P49

WOLFSON D, 1999, IEEE PHOTONIC TECH L, V11, P1494

Editorial or Peer reviewed

REVIEWED

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August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11473
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