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conference paper
Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs
2000
Compound Semiconductors 1999
We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current densities approximate to100 A/cm(2). Maximum modal gains on the order of 5 cm(-1) are deduced for a single QD sheet.
Type
conference paper
Web of Science ID
WOS:000177563100063
Authors
Publication date
2000
Published in
Compound Semiconductors 1999
Series title/Series vol.
Institute of Physics Conference Series; 166
Start page
273
End page
276
Peer reviewed
REVIEWED
Event name | Event place | Event date |
Berlin, Germany | August 22-26, 1999 | |
Available on Infoscience
August 31, 2007
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