Carrier-induced effects on absorption and emission in V-groove quantum wire diodes

We report on carrier-induced effects on emission and absorption in forward biased GaAs/AlGaAs V-groove quantum wire (QWR) diodes observed using low-temperature (10 K) photoluminescence (PL), electroluminescence (EL) and PL excitation (PLE) spectroscopy. In the case of simultaneous electron-hole injection we observe a band-gap renormalization (BGR) of at least 5 meV for a carrier density of approximate to 10(6) cm(-1), by comparing high-density EL spectra with low-density PLE spectra. In the case of electron injection of approximate to 10(6) cm(-1) we observe a complete quenching of the PLE absorption edge related to a Burstein-Moss shift of approximate to 35 meV. Hole band-filling is much less effective due to smaller subband spacing and larger density-of-states in the valence band.


Published in:
Physica Status Solidi a-Applied Research, 178, 1, 249-253
Year:
2000
ISSN:
0031-8965
Keywords:
Note:
Ecole Polytech Fed Lausanne, Dept Phys, CH-1015 Lausanne, Switzerland. Weman, H, Ecole Polytech Fed Lausanne, Dept Phys, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 303TG
Times Cited: 1
Cited Reference Count: 9
Cited References:
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 Record created 2007-08-31, last modified 2018-03-18


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