Theory of ultrafast Rayleigh scattering in semiconductor quantum wells
The Rayleigh scattering of light at resonance with the ground state exciton transition in quantum wells is studied by means of a microscopic model. The disorder-induced localization of the exciton center-of-mass leads to characteristic features of the scattered intensity which can help understanding the outcome of secondary emission experiments. In particular, the connection between time-resolved scattering and energy-level statistics, and the enhancement of the backscattered intensity in angle-resolved measurements are discussed.
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Humboldt Univ, Inst Phys, D-10117 Berlin, Germany. Swiss Fed Inst Technol, EPFL, Dept Phys, CH-1015 Lausanne, Switzerland. Savona, V, Humboldt Univ, Inst Phys, Hausvogteipl 5-7, D-10117 Berlin, Germany.
ISI Document Delivery No.: 362PZ
Cited Reference Count: 28
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