Effect of intercarrier scattering on intersubband transitions in GaAs/AlGaAs quantum well systems
In the present work, we theoretically investigate the intersubband relaxation of electrons in quantum well systems during photoexcitation using an ensemble Monte Carlo approach. In particular, we compare with recent experimental results by Hartig et al. (Phys. Rev. B (1999)), in which time-resolved photoluminescence measurements are made of the second subband carrier population after band-to-band excitation in a wide coupled quantum well system. In these experiments, the first excited subband energy is less than the polar optical phonon energy. We find excellent agreement between the simulated decay time of the n = 2 subband, and the experimental photoluminescence decay, although it is difficult to distinguish the pure decay time due to electron-electron scattering versus that due to polar optical phonons caused by carrier heating effects. (C) 1999 Elsevier Science B.V. All rights reserved.
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Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA. Univ Roma Tor Vergata, INFM, I-00133 Rome, Italy. Univ Roma Tor Vergata, Dipartimento Ingn Elettron, I-00133 Rome, Italy. Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland. Goodnick, SM, Arizona State Univ, Dept Elect Engn, POB 875706, Tempe, AZ 85287 USA.
ISI Document Delivery No.: 267TP
Times Cited: 2
Cited Reference Count: 6
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Record created on 2007-08-31, modified on 2016-08-08