Journal article

Effect of intercarrier scattering on intersubband transitions in GaAs/AlGaAs quantum well systems

In the present work, we theoretically investigate the intersubband relaxation of electrons in quantum well systems during photoexcitation using an ensemble Monte Carlo approach. In particular, we compare with recent experimental results by Hartig et al. (Phys. Rev. B (1999)), in which time-resolved photoluminescence measurements are made of the second subband carrier population after band-to-band excitation in a wide coupled quantum well system. In these experiments, the first excited subband energy is less than the polar optical phonon energy. We find excellent agreement between the simulated decay time of the n = 2 subband, and the experimental photoluminescence decay, although it is difficult to distinguish the pure decay time due to electron-electron scattering versus that due to polar optical phonons caused by carrier heating effects. (C) 1999 Elsevier Science B.V. All rights reserved.

    Keywords: intersubband scattering ; quantum wells ; Monte Carlo method ; MONTE-CARLO ; WIDE ; RELAXATION


    Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA. Univ Roma Tor Vergata, INFM, I-00133 Rome, Italy. Univ Roma Tor Vergata, Dipartimento Ingn Elettron, I-00133 Rome, Italy. Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland. Goodnick, SM, Arizona State Univ, Dept Elect Engn, POB 875706, Tempe, AZ 85287 USA.

    ISI Document Delivery No.: 267TP

    Times Cited: 2

    Cited Reference Count: 6

    Cited References:

    DUR M, 1996, PHYS REV B, V54, P17794

    DUR M, 1997, PHYS STATUS SOLIDI B, V204, P170


    HARTIG M, 1999, PHYS REV B, V60, P1500

    MURDIN BN, 1997, PHYS REV B, V55, P5171

    OBERLI DY, 1987, PHYS REV LETT, V59, P696


    Record created on 2007-08-31, modified on 2016-08-08


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