Infoscience

Journal article

Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire

We describe the first stage of the evolution of CL spectra, intensity and dislocation contrast under low keV electron beam for ELO-GaN with a low dislocation density. The UV and yellow intensities are decreased by beam irradiation. We have observed a broadening of the UV peak towards low energies followed by a red shift. This is explained in terms of an electron beam activation of non-radiative centers which relax partially the compressive strain, The dislocation contrast is lowered, but the dislocations become more non-radiative. We suggest that dislocations are preferential ways for the flux of non-radiative centers from the coalescence boundaries to the bulk. (C) 1999 Elsevier Science B.V. All rights reserved.

    Keywords: GaN ; dislocations ; cathodoluminescence

    Note:

    Univ Sci & Technol Lille, Lab Struct & Proprietes Etat Solide, UPRESA 8008, F-59655 Villeneuve Dascq, France. CRHEA, CNRS, F-06560 Valbonne, France. Ecole Polytech Fed Lausanne, CIME, Lausanne, Switzerland. Ecole Polytech Fed Lausanne, IMO, Lausanne, Switzerland. Sieber, B, Univ Sci & Technol Lille, Lab Struct & Proprietes Etat Solide, UPRESA 8008, Batiment C6, F-59655 Villeneuve Dascq, France.

    ISI Document Delivery No.: 268ZX

    Times Cited: 0

    Cited Reference Count: 9

    Cited References:

    AURET FD, 1999, APPL PHYS LETT, V74, P407

    BEAUMONT B, 1998, MRS INTERNET J N S R, V3

    BEAUMONT B, 1999, 3 INT C NITR SEM MON

    BUYANOVA IA, 1998, APPL PHYS LETT, V73, P2968

    ROSNER SJ, 1997, APPL PHYS LETT, V70, P420

    ROSNER SJ, 1999, APPL PHYS LETT, V74, P2035

    SUGAHARA T, 1998, JPN J APPL PHYS 2, V37, L398

    TOTH M, 1999, MRS INT J NITRIDE SE

    ZALDIVAR MH, 1999, J APPL PHYS, V85, P1120

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

Related material