Disorder-averaged excitonic response and its application to normal-mode coupling in semiconductor microcavities within a linear dispersion theory
Summary form only given. Radiative coupling between one or more quantum wells (QWs) and the single-cavity mode of a moderate reflectivity semiconductor microcavity leads to normal-mode coupling (NMC), observed as a doubled-peaked spectrum in reflection, transmission, or photoluminescence. Recent studies show that the excitonic response of microcavities depends very sensitively on structural disorder, e.g., influencing the NMC peak linewidths. A full treatment of the interplay of QW structural disorder, the attractive Coulomb interaction of electron-hole pairs, and the radiative coupling effects upon the optical response of real structures is a very complex task. We demonstrate here that the problem of disorder in a QW system can be isolated by carefully measuring the disorder-averaged optical susceptibility of a InGaAs multiple quantum well.
Keywords: excitons- ; gallium-arsenide ; III-V-semiconductors ; indium-compounds ; micro-optics ; nonlinear-optical-susceptibility ; optical-resonators ; reflectivity- ; semiconductor-quantum-wells ; disorder-averaged-excitonic-response ; normal-mode-coupling ; semiconductor-microcavities ; linear-dispersion-theory ; radiative-coupling ; single-cavity-mode ; moderate-reflectivity-semiconductor-microcavity ; doubled-peaked-spectrum ; photoluminescence- ; transmission- ; reflection- ; excitonic-response ; microcavities- ; NMC-peak-linewidths ; QW-structural-disorder ; attractive-Coulomb-interaction ; electron-hole-pairs ; optical-response ; disorder-averaged-optical-susceptibility-measurement ; multiple-quantum-well ; InGaAs-
Record created on 2007-08-31, modified on 2016-08-08