Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures

• Published in: Journal of Vacuum Science & Technology B (ISSN: 1071-1023), vol. 16, num. 4, p. 2334-2341
• Publication date: 1998

Lattice-matched Zn1-yCdySe/InxGa1-xAs heterojunctions can be fabricated by molecular beam epitaxy on GaAs(001) 2x4 surfaces in a wide range of compositions provided that a suitable strain relaxation profile is achieved within the ternary m-V buffer layer. We focus here on the structural properties of the resulting II-VI/III-V heterostructures and discuss the distribution of native defects, including misfit and threading dislocations, stacking faults, and surface corrugations, (C) 1998 American Vacuum Society.

Keywords: MOLECULAR-BEAM-EPITAXY ; QUANTUM-WELL STRUCTURES ; PUMPED BLUE LASERS ; MISFIT DISLOCATIONS ; INTERFACE COMPOSITION ; SURFACE-MORPHOLOGY ; BAND ; OFFSETS ; CROSS-HATCH ; ZNSE-GAAS ; LAYERS

Note:

INFM, Lab Nazl TASC, Area Ric, I-34012 Trieste, Italy. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy. INFM, I-35131 Padua, Italy. Ecole Polytech Fed Lausanne, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. CNR, Ist Maspec, I-43100 Parma, Italy. CNR, Ist ICMAT, I-00016 Monterotondo, Rome, Italy. Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy. Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA. Muller, B, INFM, Lab Nazl TASC, Area Ric, Padriciano 99, I-34012 Trieste, Italy.

ISI Document Delivery No.: 110LN

Times Cited: 1

Cited Reference Count: 48

Cited References:

1994, P SPIE, V2346, P1

ABRAHAMS MS, 1972, APPL PHYS LETT, V21, P185

ADACHI S, 1982, J APPL PHYS, V53, P8775

BARONI S, 1988, P 19 INT C PHYS SEM, P525

BEANLAND R, 1995, J CRYST GROWTH, V149, P1

BONARD JM, 1996, THESIS ECOLE POLYTEC

BONARD JM, 1997, PHIL MAG LETT, V75, P219

BONARD JM, 1998, J APPL PHYS, V83, P1945

BOSACCHI A, 1997, J CRYST GROWTH 2, V175, P1009

BRILLSON LJ, 1992, HDB SEMICONDUCTORS, V1, P281

CHANG KH, 1990, J APPL PHYS, V67, P4093

DANDREA RG, 1990, PHYS REV B, V42, P3213

DRIGO AV, 1989, J APPL PHYS, V66, P1975

DRIGO AV, 1994, MIKROCHIM ACTA, V114, P89

FITZGERALD EA, 1989, J APPL PHYS, V65, P2220

FITZGERALD EA, 1991, APPL PHYS LETT, V59, P811

FRANCIOSI A, 1996, SURF SCI REP, V25, P1

GUHA S, 1990, APPL PHYS LETT, V57, P2110

HAGEN W, 1978, APPL PHYS, V17, P85

HARRISON WA, 1979, J VAC SCI TECHNOL, V16, P1492

HERVE D, 1995, APPL PHYS LETT, V67, P2144

HERVE D, 1996, J CRYST GROWTH, V159, P600

HEUN S, 1997, APPL PHYS LETT, V70, P237

HEUN S, 1997, J VAC SCI TECHNOL B, V15, P1279

HEUN S, 1998, J APPL PHYS, V83, P2504

JEON H, 1990, APPL PHYS LETT, V57, P2413

JEON H, 1992, APPL PHYS LETT, V60, P2045

KANG JM, 1995, APPL PHYS LETT, V67, P641

KUNC K, 1981, PHYS REV B, V24, P3445

KUO LH, 1996, APPL PHYS LETT, V68, P2413

LAZZARINI L, 1997, I PHYS C SER, V157, P149

MADELUNG O, 1991, DATA SCI TECHNOLOGY

MATTHEWS JW, 1975, J VAC SCI TECHNOL, V12, P126

MATTHEWS JW, 1976, THIN SOLID FILMS, V33, P253

MOISON JM, 1994, APPL PHYS LETT, V64, P196

MULLER BH, UNPUB

MULLER BH, 1998, J CRYST GROWTH, V185, P21

PERESSI M, 1991, PHYS REV B, V43, P7347

PETRUZZELLO J, 1988, J APPL PHYS, V63, P2299

RIESZ F, 1994, J CRYST GROWTH, V140, P213

SAMARTH N, 1989, APPL PHYS LETT, V54, P2680

SHIRYAEV SY, 1994, APPL PHYS LETT, V64, P3305

SPRINGHOLZ G, 1996, SURF SCI, V365, P453

TERSOFF J, 1987, PHYS REV LETT, V59, P946

TERSOFF J, 1993, APPL PHYS LETT, V62, P693

WU BJ, 1996, APPL PHYS LETT, V68, P2828

XIE W, 1992, APPL PHYS LETT, V60, P1999

YOON SF, 1993, J VAC SCI TECHNOL B, V11, P562

Reference

• LOEQ-ARTICLE-1998-029
• doi:10.1116/1.590171
• View record in Web of Science

Record created on 2007-08-31, modified on 2017-05-12