Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures
Lattice-matched Zn1-yCdySe/InxGa1-xAs heterojunctions can be fabricated by molecular beam epitaxy on GaAs(001) 2x4 surfaces in a wide range of compositions provided that a suitable strain relaxation profile is achieved within the ternary m-V buffer layer. We focus here on the structural properties of the resulting II-VI/III-V heterostructures and discuss the distribution of native defects, including misfit and threading dislocations, stacking faults, and surface corrugations, (C) 1998 American Vacuum Society.
WOS:000075381400098
1998
16
4
2334
2341
INFM, Lab Nazl TASC, Area Ric, I-34012 Trieste, Italy. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy. INFM, I-35131 Padua, Italy. Ecole Polytech Fed Lausanne, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. CNR, Ist Maspec, I-43100 Parma, Italy. CNR, Ist ICMAT, I-00016 Monterotondo, Rome, Italy. Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy. Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA. Muller, B, INFM, Lab Nazl TASC, Area Ric, Padriciano 99, I-34012 Trieste, Italy.
ISI Document Delivery No.: 110LN
Cited Reference Count: 48
Cited References:
1994, P SPIE, V2346, P1
ABRAHAMS MS, 1972, APPL PHYS LETT, V21, P185
ADACHI S, 1982, J APPL PHYS, V53, P8775
BARONI S, 1988, P 19 INT C PHYS SEM, P525
BEANLAND R, 1995, J CRYST GROWTH, V149, P1
BONARD JM, 1996, THESIS ECOLE POLYTEC
BONARD JM, 1997, PHIL MAG LETT, V75, P219
BONARD JM, 1998, J APPL PHYS, V83, P1945
BOSACCHI A, 1997, J CRYST GROWTH 2, V175, P1009
BRILLSON LJ, 1992, HDB SEMICONDUCTORS, V1, P281
CHANG KH, 1990, J APPL PHYS, V67, P4093
DANDREA RG, 1990, PHYS REV B, V42, P3213
DRIGO AV, 1989, J APPL PHYS, V66, P1975
DRIGO AV, 1994, MIKROCHIM ACTA, V114, P89
FITZGERALD EA, 1989, J APPL PHYS, V65, P2220
FITZGERALD EA, 1991, APPL PHYS LETT, V59, P811
FRANCIOSI A, 1996, SURF SCI REP, V25, P1
GUHA S, 1990, APPL PHYS LETT, V57, P2110
HAGEN W, 1978, APPL PHYS, V17, P85
HARRISON WA, 1979, J VAC SCI TECHNOL, V16, P1492
HERVE D, 1995, APPL PHYS LETT, V67, P2144
HERVE D, 1996, J CRYST GROWTH, V159, P600
HEUN S, 1997, APPL PHYS LETT, V70, P237
HEUN S, 1997, J VAC SCI TECHNOL B, V15, P1279
HEUN S, 1998, J APPL PHYS, V83, P2504
JEON H, 1990, APPL PHYS LETT, V57, P2413
JEON H, 1992, APPL PHYS LETT, V60, P2045
KANG JM, 1995, APPL PHYS LETT, V67, P641
KUNC K, 1981, PHYS REV B, V24, P3445
KUO LH, 1996, APPL PHYS LETT, V68, P2413
LAZZARINI L, 1997, I PHYS C SER, V157, P149
MADELUNG O, 1991, DATA SCI TECHNOLOGY
MATTHEWS JW, 1975, J VAC SCI TECHNOL, V12, P126
MATTHEWS JW, 1976, THIN SOLID FILMS, V33, P253
MOISON JM, 1994, APPL PHYS LETT, V64, P196
MULLER BH, UNPUB
MULLER BH, 1998, J CRYST GROWTH, V185, P21
PERESSI M, 1991, PHYS REV B, V43, P7347
PETRUZZELLO J, 1988, J APPL PHYS, V63, P2299
RIESZ F, 1994, J CRYST GROWTH, V140, P213
SAMARTH N, 1989, APPL PHYS LETT, V54, P2680
SHIRYAEV SY, 1994, APPL PHYS LETT, V64, P3305
SPRINGHOLZ G, 1996, SURF SCI, V365, P453
TERSOFF J, 1987, PHYS REV LETT, V59, P946
TERSOFF J, 1993, APPL PHYS LETT, V62, P693
WU BJ, 1996, APPL PHYS LETT, V68, P2828
XIE W, 1992, APPL PHYS LETT, V60, P1999
YOON SF, 1993, J VAC SCI TECHNOL B, V11, P562
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