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research article

Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures

Muller, B.
•
Heun, S.
•
Lantier, R.
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1998
Journal of Vacuum Science & Technology B

Lattice-matched Zn1-yCdySe/InxGa1-xAs heterojunctions can be fabricated by molecular beam epitaxy on GaAs(001) 2x4 surfaces in a wide range of compositions provided that a suitable strain relaxation profile is achieved within the ternary m-V buffer layer. We focus here on the structural properties of the resulting II-VI/III-V heterostructures and discuss the distribution of native defects, including misfit and threading dislocations, stacking faults, and surface corrugations, (C) 1998 American Vacuum Society.

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Type
research article
DOI
10.1116/1.590171
Web of Science ID

WOS:000075381400098

Author(s)
Muller, B.
Heun, S.
Lantier, R.
Rubini, S.
Paggel, J. J.
Sorba, L.
Bonanni, A.
Lazzarino, M.
Bonanni, B.
Franciosi, A.
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Date Issued

1998

Published in
Journal of Vacuum Science & Technology B
Volume

16

Issue

4

Start page

2334

End page

2341

Subjects

MOLECULAR-BEAM-EPITAXY

•

QUANTUM-WELL STRUCTURES

•

PUMPED BLUE LASERS

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MISFIT DISLOCATIONS

•

INTERFACE COMPOSITION

•

SURFACE-MORPHOLOGY

•

BAND

•

OFFSETS

•

CROSS-HATCH

•

ZNSE-GAAS

•

LAYERS

Note

INFM, Lab Nazl TASC, Area Ric, I-34012 Trieste, Italy. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy. INFM, I-35131 Padua, Italy. Ecole Polytech Fed Lausanne, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. CNR, Ist Maspec, I-43100 Parma, Italy. CNR, Ist ICMAT, I-00016 Monterotondo, Rome, Italy. Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy. Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA. Muller, B, INFM, Lab Nazl TASC, Area Ric, Padriciano 99, I-34012 Trieste, Italy.

ISI Document Delivery No.: 110LN

Cited Reference Count: 48

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REVIEWED

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Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11291
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