Lattice-matched Zn1-yCdySe/InxGa1-xAs heterojunctions can be fabricated by molecular beam epitaxy on GaAs(001) 2x4 surfaces in a wide range of compositions provided that a suitable strain relaxation profile is achieved within the ternary m-V buffer layer. We focus here on the structural properties of the resulting II-VI/III-V heterostructures and discuss the distribution of native defects, including misfit and threading dislocations, stacking faults, and surface corrugations, (C) 1998 American Vacuum Society.
Note:
INFM, Lab Nazl TASC, Area Ric, I-34012 Trieste, Italy. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy. INFM, I-35131 Padua, Italy. Ecole Polytech Fed Lausanne, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. CNR, Ist Maspec, I-43100 Parma, Italy. CNR, Ist ICMAT, I-00016 Monterotondo, Rome, Italy. Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy. Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA. Muller, B, INFM, Lab Nazl TASC, Area Ric, Padriciano 99, I-34012 Trieste, Italy.
ISI Document Delivery No.: 110LN
Times Cited: 1
Cited Reference Count: 48
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