We study the dynamics of the charged and neutral excitons in a modulation-doped GaAs quantum well by time-resolved photoluminescence under a resonant excitation. The radiative lifetime of the charged exciton is found to be surprisingly short, 60 ps. This time is temperature independent between 2 and 10 K, and increases by a factor of 2 at 6 T. We discuss our findings in view of present theories of exciton radiative decay. [S0163-1829(98)03143-9].
Title
Charged exciton dynamics in GaAs quantum wells
Published in
Physical Review B
Volume
58
Issue
19
Pages
12637-12640
Date
1998
ISSN
1098-0121
Note
Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel. Swiss Fed Inst Technol, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. Finkelstein, G, Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel.
ISI Document Delivery No.: 144CE
Cited Reference Count: 18
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Record creation date
2007-08-31
