Lateral and cross-well transport of highly and moderately excited carriers in Si1-xGex/Si superlattices

Picosecond transient reflectometry and dynamic grating techniques have been applied to investigate the perpendicular and parallel transport of optically excited carriers in strained-layer Si0.83Ge0.17/Si superlattices. We present results of the carrier ambipolar diffusivity and effective lifetime measurements in the layered structure and substrate within the 10(17)-10(20) cm(-3) density range. The combined experimental data are discussed in terms of parallel and perpendicular diffusion of carriers, interface recombination, and lattice heating. The estimated lateral and cross-well diffusion constants are 10 and 0.16 cm(2)/s at room temperature, respectively. (C) 1998 American Institute of Physics.


Published in:
Journal of Applied Physics, 83, 9, 4756-4759
Year:
1998
ISSN:
0021-8979
Keywords:
Note:
Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden. Vanagas, E, Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania.
ISI Document Delivery No.: ZM292
Times Cited: 1
Cited Reference Count: 15
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