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Journal article

Lateral and cross-well transport of highly and moderately excited carriers in Si1-xGex/Si superlattices

Picosecond transient reflectometry and dynamic grating techniques have been applied to investigate the perpendicular and parallel transport of optically excited carriers in strained-layer Si0.83Ge0.17/Si superlattices. We present results of the carrier ambipolar diffusivity and effective lifetime measurements in the layered structure and substrate within the 10(17)-10(20) cm(-3) density range. The combined experimental data are discussed in terms of parallel and perpendicular diffusion of carriers, interface recombination, and lattice heating. The estimated lateral and cross-well diffusion constants are 10 and 0.16 cm(2)/s at room temperature, respectively. (C) 1998 American Institute of Physics.

    Keywords: SILICON ; SURFACE ; HETEROSTRUCTURES ; KINETICS ; LIFETIME ; BULK

    Note:

    Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden. Vanagas, E, Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania.

    ISI Document Delivery No.: ZM292

    Times Cited: 1

    Cited Reference Count: 15

    Cited References:

    ABSTREITER G, 1986, 2 DIMENSIONAL SYSTEM, P130

    ARNDT M, 1995, APPL PHYS LETT, V67, P644

    BERGNER H, 1982, OPT QUANTUM ELECT, V14, P245

    BERGNER H, 1987, APPL PHYS A-SOLID, V43, P97

    BUCZKOWSKI A, 1991, J APPL PHYS, V69, P6495

    EICHLER HJ, 1985, LASER INDUCED DYNAMI

    GRILLOT PN, 1995, J APPL PHYS, V77, P3248

    GRIVICKAS V, 1991, J APPL PHYS, V70, P1471

    KOMURO S, 1983, APPL PHYS LETT, V43, P968

    LUKE KL, 1987, J APPL PHYS, V61, P2282

    OTHONOS A, 1991, PHYS REV B, V43, P6682

    PEOPLE R, 1986, IEEE J QUANTUM ELECT, V22, P1696

    RUCKMANN I, 1992, PHYS STATUS SOLIDI B, V170, P353

    SCHLANGENOTTO H, 1974, PHYS STATUS SOLIDI A, V21, P357

    YOUNG JF, 1982, PHYS REV B, V26, P2147

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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