Infoscience

Journal article

Interface composition and stacking fault density in II-VI/III-V heterostructures

The Zn/Se flux ratio employed during the early stages of molecular beam epitaxy of pseudomorphic ZnSe/GaAs(001) as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures controls the density of the native stacking faults, which have been associated with the early degradation of blue-green lasers. In particular, the density of Shockley stacking fault pairs decreases by three to four orders of magnitude and that of Frank stacking faults by one order of magnitude in going from Zn-rich to Se-rich interfaces. (C) 1997 American Institute of Physics.

    Keywords: ZNSE-GAAS ; DISLOCATION NUCLEATION ; STRUCTURAL-PROPERTIES ; EPITAXY ; FILMS

    Note:

    Univ minnesota,dept chem engn & mat sci,minneapolis,mn 55455. ecole polytech fed lausanne,dept phys,inst micro & optoelect,ch-1015 lausanne,switzerland. cnr,ist icmat,i-00016 rome,italy. univ trieste,dipartmento fis,i-34127 trieste,italy. Heun, S, INFM,LAB NAZL TASC,AREA RIC,PADRICIANO 99,I-34012 TRIESTE,ITALY.

    ISI Document Delivery No.: WC058

    Times Cited: 28

    Cited Reference Count: 17

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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