Interface composition and stacking fault density in II-VI/III-V heterostructures

The Zn/Se flux ratio employed during the early stages of molecular beam epitaxy of pseudomorphic ZnSe/GaAs(001) as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures controls the density of the native stacking faults, which have been associated with the early degradation of blue-green lasers. In particular, the density of Shockley stacking fault pairs decreases by three to four orders of magnitude and that of Frank stacking faults by one order of magnitude in going from Zn-rich to Se-rich interfaces. (C) 1997 American Institute of Physics.


Published in:
Applied Physics Letters, 70, 2, 237-239
Year:
1997
ISSN:
0003-6951
Keywords:
Note:
Univ minnesota,dept chem engn & mat sci,minneapolis,mn 55455. ecole polytech fed lausanne,dept phys,inst micro & optoelect,ch-1015 lausanne,switzerland. cnr,ist icmat,i-00016 rome,italy. univ trieste,dipartmento fis,i-34127 trieste,italy. Heun, S, INFM,LAB NAZL TASC,AREA RIC,PADRICIANO 99,I-34012 TRIESTE,ITALY.
ISI Document Delivery No.: WC058
Times Cited: 28
Cited Reference Count: 17
Cited References:
BATSTONE JL, 1992, PHILOS MAG A, V66, P609
BONANNI A, 1995, APPL PHYS LETT, V66, P1092
BONARD JM, UNPUB
BOURRETCOURCHESNE ED, 1996, APPL PHYS LETT, V68, P1675
GAINES JM, 1993, J APPL PHYS, V73, P2835
GUHA S, 1993, APPL PHYS LETT, V63, P3023
GUHA S, 1993, APPL PHYS LETT, V63, P3107
GUHA S, 1993, J APPL PHYS, V73, P2294
GUNSHOR RL, 1994, P SOC PHOTO-OPT INS, V2346, P1
KUO LH, 1993, APPL PHYS LETT, V63, P3197
KUO LH, 1994, P SOC PHOTO-OPT INS, V2228, P144
KUO LH, 1994, PHILOS MAG A, V69, P301
NICOLINI R, 1994, PHYS REV LETT, V72, P294
PETRUZZELLO J, 1988, J APPL PHYS, V63, P2299
TANIMURA J, 1995, J APPL PHYS, V77, P6223
THOMAS G, 1979, TRANSMISSION ELECTRO
WU BJ, 1996, APPL PHYS LETT, V68, P2828
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)