Stacking faults in pseudomorphic ZnSe-GaAs and lattice-matched ZnSe-In0.04Ga0.96As layers

We report transmission electron microscopy studies of native extended defects in pseudomorphic ZnSe/GaAs (001) and lattice-matched ZnSe-In0.04Ga0.96As (001) heterostructures. The dominant defects present in the layers were identified as Shockley stacking fault pairs lying on (111) and <((11)over bar 1)> fault planes and single Frank stacking faults lying on <((1)over bar 11)> or <(1(1)over bar 1)> fault planes by comparing experimental images with the predictions obtained with the g.b = 0 rule as well as with simulated images.


Published in:
Philosophical Magazine Letters, 75, 4, 219-226
Year:
1997
ISSN:
0950-0839
Keywords:
Note:
Ecole polytech fed lausanne,inst micro & optoelect,dept phys,ch-1015 lausanne,switzerland. infm,tasc,lab nazl,i-34012 trieste,italy. univ minnesota,dept chem engn & mat sci,minneapolis,mn 55455. cnr,inst icmat,rome,italy. univ trieste,dipartmento fis,i-34127 trieste,italy.
ISI Document Delivery No.: WT350
Times Cited: 10
Cited Reference Count: 12
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