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Second-harmonic generation involving valence-subband transitions in p-doped GaAs/AlxGa1-xAs quantum wells

We present second-harmonic generation experiments in p-doped asymmetrically stepped quantum wells using the emission of a free-electron laser in the wavelength interval between 13 and 18 mu m. The wells are designed such that the three fewest valence-subbands are about equally spaced. We measured the angular and frequency dependence of the second-harmonic signal excited by intense laser irradiation chosen to be nearly resonant with the transitions between the three lowest valence subbands. We see evidence of the optical second-order susceptibility components chi(xxz)((2)), chi(zxx)((2)) and chi(zxy)((2)), chi(xyz)((2)) in the quantum wells and determine their enhancement with respect to chi(xyz)((2)) of bulk GaAs.

    Keywords: 2ND-HARMONIC GENERATION ; MU-M

    Note:

    Stanford univ,solid state lab,stanford,ca 94305. univ newcastle upon tyne,dept phys,newcastle tyne ne1 7ru,tyne & wear,england. fom,inst plasma phys rijnhuizen,nieuwegein,netherlands. Bitz, A, ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND.

    ISI Document Delivery No.: YD475

    Times Cited: 0

    Cited Reference Count: 15

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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