Efficient intersubband scattering via carrier-carrier interaction
Using femtosecond resonant luminescence, we have measured the intersubband scattering rate of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing be tween the first two electron subbands is smaller than the LO phonon energy, we observe that intersubband scattering is a subpicosecond process, much faster than previously measured or anticipated. Our experimental results are in perfect agreement with Monte Carlo calculations, which show that carrier-carrier interaction is responsible for the ultrafast transitions.
WOS:A1997YJ65400046
1997
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Univ oxford, clarendon lab, oxford ox1 3pu, england. Hartig, M, SWISS FED INST TECHNOL, DEPT PHYS, IMO, CH-1015 LAUSANNE, SWITZERLAND.
ISI Document Delivery No.: YJ654
Cited Reference Count: 6
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