Characterization of semiconductor sub-micron gratings: Is there an alternative to scanning electron microscopy?

The characterization of sub-micron gratings is usually performed on scanning electron microscopes, although the dimensions of the features often make the observations difficult. We report here on a new method applicable to III-V and II-VI semiconductors: we use transmission electron microscopy on wedge-shaped samples oriented along a [111] zone axis. Grating parameters can be obtained with a precision of 1 nm, along with information on the shape and the regularity of the ridge profile, the surface quality as well as the local chemical composition.


Publié dans:
Semiconductor Science and Technology, 11, 3, 410-414
Année
1996
ISSN:
0268-1242
Mots-clefs:
Note:
Bonard, JM, ECOLE POLYTECH FED LAUSANNE,DEPT PHYS,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: TZ797
Times Cited: 2
Cited Reference Count: 15
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Laboratoires:




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