Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation
We have investigated the intersubband scattering of electrons in GaAs quantum wells using luminescence up-conversion with 100-fs resolution. The decay time of the n=2 electron-to-heavy-hole transition (e,hh)(2) depends both on the excess energy of the charge carriers and on the excitation density. A Monte Carlo simulation allows us to reproduce the experimental data with high accuracy. The intrinsic LO-phonon scattering rate is found to be 2.0x10(12) s(-1) for 80-meV subband separation. We show the wave-vector dependence and explain the density and excess energy dependence.
WOS:A1996VX71700013
1996
54
20
14269
14272
Univ oxford,dept phys,clarendon lab,oxford ox1 3pu,england. Hartig, M, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,LAB OPTOELECTR QUANT,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: VX717
Cited Reference Count: 23
Cited References:
BLOM PWM, 1994, OPTICAL QUANTUM ELEC, V26, P667
CRAIG K, 1994, SEMICOND SCI TECH S, V9, P627
DEVEAUD B, 1988, APPL PHYS LETT, V52, P1886
DEVEAUD B, 1993, SOLID STATE COMMUN, V85, P367
DEVEAUD B, 1994, SEMICOND SCI TECH S, V9, P722
FAIST J, 1993, APPL PHYS LETT, V63, P1354
FAIST J, 1994, SCIENCE, V264, P553
FERREIRA R, 1989, PHYS REV B, V40, P1074
GOODNICK SM, 1988, PHYS REV B, V38, P10135
HUNSCHE S, 1994, PHYS REV B, V50, P5791
KNOX WH, 1985, PHYS REV LETT, V54, P1306
LEO K, 1988, PHYS REV B, V37, P7127
LEVENSON JA, 1989, SOLID STATE ELECTRON, V32, P1869
MORRIS D, 1994, SUPERLATTICE MICROST, V15, P309
NASH KJ, 1992, PHYS REV B, V46, P7723
OBERLI DY, 1987, PHYS REV LETT, V59, P696
ROTA L, 1993, APPL PHYS LETT, V62, P2883
RUCKER H, 1991, PHYS REV B, V44, P3463
RUCKER H, 1992, PHYS REV B, V45, P6747
RUCKER H, 1992, PHYS REV B, V45, P7647
SHAH J, 1987, PHYS REV LETT, V59, P2222
TATHAM MC, 1989, PHYS REV LETT, V63, P1637
TURNER K, 1995, APPL PHYS LETT, V66, P3188
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