Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation

We have investigated the intersubband scattering of electrons in GaAs quantum wells using luminescence up-conversion with 100-fs resolution. The decay time of the n=2 electron-to-heavy-hole transition (e,hh)(2) depends both on the excess energy of the charge carriers and on the excitation density. A Monte Carlo simulation allows us to reproduce the experimental data with high accuracy. The intrinsic LO-phonon scattering rate is found to be 2.0x10(12) s(-1) for 80-meV subband separation. We show the wave-vector dependence and explain the density and excess energy dependence.


Published in:
Physical Review B, 54, 20, 14269-14272
Year:
1996
ISSN:
0163-1829
Keywords:
Note:
Univ oxford,dept phys,clarendon lab,oxford ox1 3pu,england. Hartig, M, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,LAB OPTOELECTR QUANT,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: VX717
Times Cited: 9
Cited Reference Count: 23
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