Infoscience

Journal article

Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation

We have investigated the intersubband scattering of electrons in GaAs quantum wells using luminescence up-conversion with 100-fs resolution. The decay time of the n=2 electron-to-heavy-hole transition (e,hh)(2) depends both on the excess energy of the charge carriers and on the excitation density. A Monte Carlo simulation allows us to reproduce the experimental data with high accuracy. The intrinsic LO-phonon scattering rate is found to be 2.0x10(12) s(-1) for 80-meV subband separation. We show the wave-vector dependence and explain the density and excess energy dependence.

    Keywords: ELECTRON-PHONON INTERACTION ; GAAS ; RELAXATION ; CARRIER ; SPECTROSCOPY ; DYNAMICS ; CAPTURE

    Note:

    Univ oxford,dept phys,clarendon lab,oxford ox1 3pu,england. Hartig, M, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,LAB OPTOELECTR QUANT,CH-1015 LAUSANNE,SWITZERLAND.

    ISI Document Delivery No.: VX717

    Times Cited: 9

    Cited Reference Count: 23

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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